Micron Technology recently unveiled 176-layer, triple-level-cell (TLC), 3D NAND flash memory with a 30% smaller die size that employs a new replacement-gate (RG) NAND technology. The chips offer a 35% ...

NAND Flash is a type of non-volatile memory technology that has revolutionized data storage in the digital age. It is a form of flash memory, which means it can be electrically erased and reprogrammed ...

Cypress Semiconductor Corp. announced general availability of its USB host mass storage reference design kit (RDK) for embedded applications. The CY4640 hardware/software solution enables mass storage ...

This CMOS two-input combination NAND/NOR gate is a three-input, fourpin logic gate. A p-channel enhancementtype MOSFET (Q1) and an n-channel enhancement-type MOSFET (Q4) form one complementary ...

This is going to be a column that’s divided into three sections. It’s based on a question that a student posed in the EEWeb forums, and he also sent it directly to yours truly. The core of this ...